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IRFI644A
Power MOSFET
Description
www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.214Ω (Typ.) IRFW/I644A BVDSS = 250 V RDS(on) = 0.28Ω ID = 14 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Ga...
Fairchild Semiconductor
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