PD - 9.1353A
PRELIMINARY
IRFI530N
D
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
VDSS = 100V
G S
RDS(on) = 0.11Ω ID = 12A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to...
