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IRFI510A
Advanced Power MOSFET
Description
Advanced Power
MOSFET
FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.) Ο IRFW/I510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 5.6 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Ga...
Fairchild Semiconductor
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