IRFHS9301PBF

VDS VGS max RDS(on) max (@VGS = -10V) Qg (typical) ID (@TC = 25°C) -30 ±20 37 13 d-8.5 V V mΩ nC A TOP VIEW IRFHS9301PbF HEXFET® Power MOSFET D1 D2 G3 6D D 5D S 4S D D DG D D S S 2mm x 2mm PQFN Applications l Charge and Discharge Switch for Battery Application l System/load switch Features and Benefits Features Low RDSon (≤ 37mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.0 mm) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification results in Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFHS9301TRPBF IRFHS9301TR2PBF Package Type PQFN 2mm x 2mm PQFN 2mm x 2mm Standard Pack Form Tape and Reel Tape and Reel Quantity 4000 400 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25°C IDM PD @TA = 25°C PD @ TA = 70°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V cContinuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current fPower Dissipation fPower Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Max. -30 ± 20 -6.0 -4.8 -13d -10d d-8.5 -52 2.1 1.3 0.02 -55 to + 15...