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PD - 90436F
POWER MOSFET THRU-HOLE (MO-036AB)
Product Summary
Part Number IRFG6110 IRFG6110 RDS(on) 0.7Ω 1.4Ω
IRFG6110 JANTX2N7336 JANTXV2N7336 REF:MIL-PRF-19500/598 100V, Combination 2N-2P-CHANNEL
HEXFET MOSFET TECHNOLOGY
®
ID CHANNEL 1.0A N -0.75A P
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET tr.
POWER MOSFET THRU-HOLE
www.DataSheet4U.com
PD - 90436F
POWER MOSFET THRU-HOLE (MO-036AB)
Product Summary
Part Number IRFG6110 IRFG6110 RDS(on) 0.7Ω 1.4Ω
IRFG6110 JANTX2N7336 JANTXV2N7336 REF:MIL-PRF-19500/598 100V, Combination 2N-2P-CHANNEL
HEXFET MOSFET TECHNOLOGY
®
ID CHANNEL 1.0A N -0.75A P
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
MO-036AB
Features:
n n n n n n
Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS =± 10V, TC = 25°C ID @ VGS =± 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Po.