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IRFF9230 Datasheet

Part Number IRFF9230
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description P-Channel Power MOSFET
Datasheet IRFF9230 DatasheetIRFF9230 Datasheet (PDF)

IRFF9230 Data Sheet February 1999 File Number 2225.2 -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar swi.

  IRFF9230   IRFF9230






Part Number IRFF9230
Manufacturers International Rectifier
Logo International Rectifier
Description P-CHANNEL TRANSISTOR
Datasheet IRFF9230 DatasheetIRFF9230 Datasheet (PDF)

PD-90551E REPETITIVEAVALANCHEAND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE - TO-205AF (TO-39) Product Summary Part Number BVDSS RDS(on) IRFF9230 -200V 0.80Ω ID -4.0A IRFF9230 JANTX2N6851 JANTXV2N6851 JANS2N6851 REF:MIL-PRF-19500/564 200V, P-CHANNEL The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resistance combined with high.

  IRFF9230   IRFF9230







P-Channel Power MOSFET

IRFF9230 Data Sheet February 1999 File Number 2225.2 -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17512. Features • -4.0A, -200V • rDS(ON) = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Symbol D Ordering Information PART NUMBER IRFF9230 PACKAGE TO-205AF BRAND IRFF9230 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE 4-114 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFF9230 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFF9230 -200 -200 -4.0 -16 ±20 25 0.2 500 -55 to 150 300 UNITS V V A A V W W/oC mJ oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . .


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