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IRFF9110 Datasheet

Part Number IRFF9110
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
Datasheet IRFF9110 DatasheetIRFF9110 Datasheet (PDF)

( DataSheet : www.DataSheet4U.com ) PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) IRFF9110 -100V 1.2Ω ID -2.5A  IRFF9110 100V, P-CHANNEL The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The H.

  IRFF9110   IRFF9110






Part Number IRFF9113
Manufacturers International Rectifier
Logo International Rectifier
Description (IRFF9110 - IRFF9113) P-Channel Power MOSFET
Datasheet IRFF9110 DatasheetIRFF9113 Datasheet (PDF)

( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com .

  IRFF9110   IRFF9110







Part Number IRFF9112
Manufacturers International Rectifier
Logo International Rectifier
Description (IRFF9110 - IRFF9113) P-Channel Power MOSFET
Datasheet IRFF9110 DatasheetIRFF9112 Datasheet (PDF)

( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com .

  IRFF9110   IRFF9110







Part Number IRFF9111
Manufacturers International Rectifier
Logo International Rectifier
Description (IRFF9110 - IRFF9113) P-Channel Power MOSFET
Datasheet IRFF9110 DatasheetIRFF9111 Datasheet (PDF)

( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com .

  IRFF9110   IRFF9110







HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

( DataSheet : www.DataSheet4U.com ) PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) IRFF9110 -100V 1.2Ω ID -2.5A  IRFF9110 100V, P-CHANNEL The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.  TO-39 Features: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the la.


2006-04-11 : IRFF9111    IRFF9112    IRFF9110    IRFF9113    TAA865    TAA861A    TAA861    AD8220    TAA865A    YMU769   


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