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IRFF420 Datasheet

Part Number IRFF420
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel Power MOSFET
Datasheet IRFF420 DatasheetIRFF420 Datasheet (PDF)

IRFF420 Data Sheet March 1999 File Number 1891.4 1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching.

  IRFF420   IRFF420






Part Number IRFF420
Manufacturers GE
Logo GE
Description FIELD EFFECT POWER TRANSISTOR
Datasheet IRFF420 DatasheetIRFF420 Datasheet (PDF)

~D~[F~ IRFF420,421 FIELD EFFECT POVVER TRANSISTOR 1.6 AMPERES 500, 450 VOLTS ROS(ON) =3.0 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating .

  IRFF420   IRFF420







Part Number IRFF420
Manufacturers Seme LAB
Logo Seme LAB
Description N-Channel Power MOSFET
Datasheet IRFF420 DatasheetIRFF420 Datasheet (PDF)

IRFF420 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) N–CHANNEL POWER MOSFET BVDSS ID(cont) RDS(on) 500V 1.5 3.0W 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 5 .0 8 (0 .2 0 0 ) ty p .  0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) ! 2 .5 4 (0 .1 0 0 ) FEATURES • AVALANCHE ENERGY RATED • HERMETIC.

  IRFF420   IRFF420







Part Number IRFF420
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET TRANSISTORS
Datasheet IRFF420 DatasheetIRFF420 Datasheet (PDF)

PD - 90429D IRFF420 JANTX2N6794 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6794 HEXFET®TRANSISTORS REF:MIL-PRF-19500/555 THRU-HOLE (TO-205AF) 500V, N-CHANNEL Product Summary Part Number BVDSS IRFF420 500V RDS(on) 3.0Ω ID 1.5A The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resistance combined with high transcond.

  IRFF420   IRFF420







N-Channel Power MOSFET

IRFF420 Data Sheet March 1999 File Number 1891.4 1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405. Features • 1.6A, 500V • rDS(ON) = 3.000Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFF420 PACKAGE TO-205AF BRAND IRFF420 Symbol D NOTE: When ordering, include the entire part number. G S Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFF420 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFF420 500 500 1.6 6.5 ±20 20 0.16 210 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC o.


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