IRFF210
Data Sheet March 1999 File Number 1887.3
2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET
This N-Channel enhanceme...
IRFF210
Data Sheet March 1999 File Number 1887.3
2.2A, 200V, 1.500 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power
MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power
MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17442.
Features
2.2A, 200V rDS(ON) = 1.500Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER IRFF210 PACKAGE TO-205AF BRAND IRFF210
Symbol
D
NOTE: When ordering, include the entire part number.
G
S
Packaging
JEDEC TO-205AF
DRAIN (CASE)
SOURCE
GATE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
IRFF210
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified IRFF210 200 200 2.2 9.0 ± 20 15 0.12 30 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC
o...