PD - 97015
IRFD123
www.irf.com
1 06/09/05
IRFD123
2
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IRFD123
www.irf.com
3
IRFD123
4
www.irf.com
...
PD - 97015
IRFD123
www.irf.com
1 06/09/05
IRFD123
2
www.irf.com
IRFD123
www.irf.com
3
IRFD123
4
www.irf.com
IRFD123
www.irf.com
5
IRFD123
6
www.irf.com
IRFD123
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer
+ +
-
dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ -
*
Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied
Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
ISD
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig -14 For N Channel HEXFETS
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7
IRFD123
Hexdip Package Outline
Dimensions are shown in millimeters (inches)
Hexdip Part Marking Information
UCDTÃDTÃ6IÃDSA9 ! DIU@SI6UDPI6G S@8UDAD@S GPBP Q6SUÃIVH7@S
,5)'
;;;;
6TT@H7G`ÃGPUÃ8P9@
96U@Ã8P9@ Q`XX6 QÃ2ÃG@69AS@@Ãvhy `Ã2Ã`@6S XXÃ2ÃX@@F 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/05
8
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