Power MOSFET
IRFD120, SiHFD120
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
Power
MOSFET
IRFD120, SiHFD120
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
16 4.4 7.7 Single
D
0.27
HVMDIP
S G
D
G
S N-Channel
MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175 °C Operating Temperature Fast Switching Ease of Paralleling Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
HVMDIP IRFD120PbF SiHFD120-E3 IRFD120 ...