isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness...
isc N-Channel
MOSFET Transistor
·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
IRFBG30
·APPLICATIONS ·PFC stages ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
1000
VGSS ID IDM
Gate-Source
Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
3.1 2.0
12
PD
Total Dissipation
125
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1
62.5
UNIT ℃/W ℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
IRFBG30
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID= 0.25mA
1000
VGS(th)
Gate Threshold
Voltage
VDS=VGS; ID=0.25mA
2.0
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=1.9A
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward
voltage
VGS= ±20V;VDS= 0V
VDS= 1000V; VGS= 0V;Tj=25℃ VDS= 800V; VGS= 0V;Tj=125℃
ISD=3.1A, VGS = 0 V
V
4.0
V
5
Ω
±0.1 μA
100 500
μA
1....
