IRFBE30LPBF

www.DataSheet4U.com PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET® Power MOSFET D VDSS = 800V G S RDS(on) = 3.0Ω ID = 4.1A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D2Pak IRFBE30S TO-262 IRFBE30L Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 4.1 2.6 16 125 1.0 ± 20 260 4.1 13 2.0 -55 to + 150 Units A c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current W W/°C V mJ A mJ V/ns °C c Peak Diode Recovery dv/dt e Repetitive Avalanche Energy Operating Junction and Storage Temperature Range c d Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case ) 10 lbfin (1.1Nm) Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. ––– ––– ––– Typ. ––– 0.50 ––– Max. 1.0 ––– 62 Units °C/W www.irf.com 1 07/06/04 IRFBE30S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qg...