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IRFBC30S

International Rectifier

Power MOSFET


Description
PD - 9.1015 PRELIMINARY l l l l l l l IRFBC30S/L HEXFET® Power MOSFET D Surface Mount (IRFBC30S) Low-profile through-hole (IRFBC30L) Available in Tape & Reel (IRFBC30S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 600V RDS(on) = 2.2Ω G ID = 3.6A S Description Third generation HEXFETs from international R...



International Rectifier

IRFBC30S

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