iscN-Channel MOSFET Transistor
IRFBC30A
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =2.2Ω (MAX) ·Enhancement mo...
iscN-Channel
MOSFET Transistor
IRFBC30A
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =2.2Ω (MAX) ·Enhancement mode:
Vth = 2 to 4.5V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching
Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
600
V
VGS
Gate-Source
Voltage
±30
V
ID
Drain Current-Continuous
3.6
A
IDM
Drain Current-Single Pulsed
14
A
PD
Total Dissipation @TC=25℃
74
W
Tj
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 1.7
UNIT ℃/W
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iscN-Channel
MOSFET Transistor
IRFBC30A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID= 0.25mA
600
V
VGS(th)
Gate Threshold
Voltage
VDS= 10V; ID=0.25mA
2
4.5
V
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=2.2A
2.2
Ω
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
Drain-Source Leakage Current
VDS=600V; VGS= 0V VDS=480V; VGS= 0V;TJ=125℃
Diode forward
voltage
IDR =3.6A, VGS = 0 V
±100 nA
25 250
μA
1.6
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time withou...
