IRFBA90N20D

PD - 94300 SMPS MOSFET IRFBA90N20D HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 200V RDS(on) max 0.023Ω ID 98A† Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Super-220™ Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended Clip Force Max. 98† 71† 390 650 4.3 ± 30 6.3 -55 to + 175 300 (1.6mm from case ) 20 Units A W W/°C V V/ns °C N Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 0.23 ––– 58 Units °C/W Notes  through † are on page 8 www.irf.com 1 09/06/01 IRFBA90N20D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.22...