IRFBA22N50

PD-91866B SMPS MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptible Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN1001) IRFBA22N50A HEXFET® Power MOSFET VDSS 500V RDS(on) max 0.23Ω ID 24A Super-220™ (TO-273AA) Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended clip force Max. 24 15 96 340 2.7 ± 30 3.4 -55 to + 150 300 (1.6mm from case ) 20 Units A W W/°C V V/ns °C N Applicable Off Line SMPS Topologies: l l Full Bridge Converters Power Factor Correction Boost Notes  through … are on page 8 www.irf.com 1 12/12/00 IRFBA22N50A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 ––– 2.0 ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V ...