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IRFB4710
N-Channel MOSFET
Description
isc N-Channel
MOSFET
Transistor IRFB4710，IIRFB4710 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.014Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS...
INCHANGE
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