www.DataSheet4U.com
PD - 97103
IRFB4321PbF
Applications l Motion Control Applications l High Efficiency Synchronous Re...
www.DataSheet4U.com
PD - 97103
IRFB4321PbF
Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance l Improved Diode Recovery Improves Switching & EMI Performance l 30V Gate
Voltage Rating Improves Robustness l Fully Characterized Avalanche SOA
HEXFET® Power
MOSFET
VDSS RDS(on) typ. max. ID
D
150V 12m: 15m: 83A
D
G
G
D
S
S
TO-220AB
D S
G
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS (Thermally limited) TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Single Pulse Avalanche Energy e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
Max.
83 c 59 330 330 2.2 ±30 120 -55 to + 175 300 10lbxin (1.1Nxm) Typ. ––– 0.50 ––– Max. 0.45 ––– 62
Units
A
W W/°C V mJ °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case g Case-to-Sink, Flat, Greased Surface Junction-to-Ambient g Units °C/W
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1
6/23/06
IRFB4321PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS RG(int)
Parameter
Drain-to-Source Breakdown
Voltage Brea...