PD - 94358
SMPS MOSFET
IRFB38N20D IRFS38N20D IRFSL38N20D
HEXFET® Power MOSFET
l
Applications High frequency DC-DC co...
PD - 94358
SMPS
MOSFET
IRFB38N20D IRFS38N20D IRFSL38N20D
HEXFET® Power
MOSFET
l
Applications High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.054Ω
ID
44A
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche
Voltage and Current
l
TO-220AB IRFB38N20D
D2Pak IRFS38N20D
TO-262 IRFSL38N20D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
44 32 180 3.8 320 2.1 ± 30 9.5 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/°C V V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Notes through Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient are on page 11
Typ.
––– 0.50 ––– –––
Max.
0.47 ––– 62 40
Units
°C/W
www.irf.com
1
12/12/01
IRFB/IRFS/IRFSL38N20D
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown
Voltage ∆V(BR)DSS/∆TJ Breakdown
Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshol...