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IRFB3306

INCHANGE
Part Number IRFB3306
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 12, 2020
Detailed Description isc N-Channel MOSFET Transistor IRFB3306，IIRFB3306 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.2mΩ ·Enhan...
Datasheet PDF File IRFB3306 PDF File

IRFB3306
IRFB3306

Overview
isc N-Channel MOSFET Transistor IRFB3306，IIRFB3306 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.
2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High efficiency synchronous rectification in SMPS ·Uninterrruptible power supply ·High speed power switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 110 IDM Drain Current-Single Pulsed 620 PD Total Dissipation @TC=25℃ 230 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175...


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