PD - 94270
SMPS MOSFET
IRFB260N
HEXFET® Power MOSFET
l
Applications High frequency DC-DC converters
VDSS
200V
RDS(...
PD - 94270
SMPS
MOSFET
IRFB260N
HEXFET® Power
MOSFET
l
Applications High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.040Ω
ID
56A
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche
Voltage and Current
l
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
56 40 220 380 2.5 ± 20 10 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/°C V V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
––– 0.50 –––
Max.
0.40 ––– 62
Units
°C/W
Notes
through
are on page 8
www.irf.com
1
8/29/01
IRFB260N
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown
Voltage ∆V(BR)DSS/∆TJ Breakdown
Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold
Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 ––– ––– 2.0 ––– ––– ––– ––– Ty...