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IRFB260 Datasheet

Part Number IRFB260
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFB260 DatasheetIRFB260 Datasheet (PDF)

PD - 94270 SMPS MOSFET IRFB260N HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 200V RDS(on) max 0.040Ω ID 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, .

  IRFB260   IRFB260






Part Number IRFB260NPBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRFB260 DatasheetIRFB260NPBF Datasheet (PDF)

PD - 95473 SMPS MOSFET IRFB260NPbF l l HEXFET® Power MOSFET Applications High frequency DC-DC converters Lead-Free VDSS 200V RDS(on) max 0.040Ω ID 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous .

  IRFB260   IRFB260







Part Number IRFB260N
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRFB260 DatasheetIRFB260N Datasheet (PDF)

isc N-Channel MOSFET Transistor IRFB260N,IIRFB260N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤40mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fully Characterized Avalanche Voltage and Current ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 56 IDM Drain Curren.

  IRFB260   IRFB260







Part Number IRFB260N
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFB260 DatasheetIRFB260N Datasheet (PDF)

PD - 94270 SMPS MOSFET IRFB260N HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 200V RDS(on) max 0.040Ω ID 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, .

  IRFB260   IRFB260







Power MOSFET

PD - 94270 SMPS MOSFET IRFB260N HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 200V RDS(on) max 0.040Ω ID 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 56 40 220 380 2.5 ± 20 10 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 0.40 ––– 62 Units °C/W Notes  through … are on page 8 www.irf.com 1 8/29/01 IRFB260N Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 ––– ––– 2.0 ––– ––– ––– ––– Ty.


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