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IRFB23N15D Datasheet

Part Number IRFB23N15D
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRFB23N15D DatasheetIRFB23N15D Datasheet (PDF)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB23N15D,IIRFB23N15D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤90mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 23 IDM Dr.

  IRFB23N15D   IRFB23N15D






Part Number IRFB23N15D
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFB23N15D DatasheetIRFB23N15D Datasheet (PDF)

PD - 95535 SMPS MOSFET IRFB23N15DPbF IRFS23N15DPbF IRFSL23N15DPbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 150V 0.090Ω 23A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current TO-220AB IRFB23N15D D2Pak TO-262 IRFS23N15D IRFSL23N15D Absolute Maximum Ratings ID @ .

  IRFB23N15D   IRFB23N15D







N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB23N15D,IIRFB23N15D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤90mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 23 IDM Drain Current-Single Pulsed 90 PD Total Dissipation @TC=25℃ 160 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.94 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB23N15D,IIRFB23N15D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID =250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=18A IGSS Gate-Source Leakage Current VGS= ±30V IDSS Drain-Source Leakage Current VDS=150V; VGS= 0V VSD Diode forward voltage IF=14A; VGS = 0V MIN TYP MAX UNIT 150 V 2 4 V 90 mΩ ±100 nA 25 μA 1.3 V NOTICE: ISC reserves the rights to make change.


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