IRFB16N60L

PD - 94631A SMPS MOSFET IRFB16N60L HEXFET® Power MOSFET Applications Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 385mΩ 600V 130ns 16A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate charge results in simpler drive requirements. Enhanced dv/dt capabilities offer improved ruggedness. TO-220AB Higher Gate voltage threshold offers improved noise immunity . Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM Max. 16 10 60 310 2.5 ±30 11 -55 to + 150 300 (1.6mm from case ) 1.1(10) Units A W W/°C V V/ns °C Nm (lbfin) c PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and e Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 130 240 450 5.8 16 A 60 1.5 200 360 670 8.7 V Conditions MOSFET symbol showing the integral reverse G S D Ãc Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On...