IRFB13N50APBF

SMPS MOSFET PD - 95122 IRFB13N50APbF HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free VDSS 500V RDS(on) max 0.450 Ω ID 14A Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current TO-220AB Absolute Maximum Ratings Parameter www.DataSheet4U.com Max. 14 9.1 56 250 2.0 ± 30 9.2 -55 to + 150 300 10 Units A W W/°C V V/ns ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torqe, 6-32 or M3 screw °C lbfin (1.1Nm) Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 560 14 25 Units mJ A mJ Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 0.50 ––– 62 Units °C/W www.irf.com 1 3/18/04 IRFB13N50APbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown ...