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IRFB11N50 Datasheet

Part Number IRFB11N50
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFB11N50 DatasheetIRFB11N50 Datasheet (PDF)

PD- 91809B SMPS MOSFET IRFB11N50A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current VDSS 500V Rds(on) max 0.52Ω ID 11A TO-220AB G D S Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS.

  IRFB11N50   IRFB11N50






Part Number IRFB11N50APBF
Manufacturers International Rectifier
Logo International Rectifier
Description SMPS MOSFET
Datasheet IRFB11N50 DatasheetIRFB11N50APBF Datasheet (PDF)

SMPS MOSFET PD- 94832 IRFB11N50APbF HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free VDSS 500V Rds(on) max 0.52Ω ID 11A Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current TO-220AB G D S Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM .

  IRFB11N50   IRFB11N50







Part Number IRFB11N50A
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRFB11N50 DatasheetIRFB11N50A Datasheet (PDF)

IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 52 13 18 Single 0.52 TO-220 D G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and current • Lead (Pb.

  IRFB11N50   IRFB11N50







Part Number IRFB11N50A
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFB11N50 DatasheetIRFB11N50A Datasheet (PDF)

PD- 91809B SMPS MOSFET IRFB11N50A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current VDSS 500V Rds(on) max 0.52Ω ID 11A TO-220AB G D S Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS.

  IRFB11N50   IRFB11N50







Power MOSFET

PD- 91809B SMPS MOSFET IRFB11N50A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current VDSS 500V Rds(on) max 0.52Ω ID 11A TO-220AB G D S Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 11 7.0 44 170 1.3 ± 30 6.9 -55 to + 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C Applicable Off Line SMPS Topologies: l l l Two Transistor Forward Half & Full Bridge Power Factor Correction Boost through … are on page 8 Notes  www.irf.com 1 3/30/99 IRFB11N5OA Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 ––– 2.0 ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS.


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