IRFAC40

Semiconductor IRFAC40, IRFAC42 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly Developmental Type TA17426. BRAND IRFAC40 IRFAC42 January 1998 6.2A and 5.4A, 600V rDS(ON) = 1.2Ω and 1.6Ω Repetitive Avalanche Energy Rated Simple Drive Requirements Ease of Paralleling Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFAC40 IRFAC42 PACKAGE TO-204AA TO-204AA Symbol D NOTE: When ordering, include the entire part number. G S Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 2156.2 5-1 IRFAC40, IRFAC42 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFAC40 Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . ...