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IRF9Z34N Datasheet

Part Number IRF9Z34N
Manufacturers INCHANGE
Logo INCHANGE
Description P-Channel MOSFET
Datasheet IRF9Z34N DatasheetIRF9Z34N Datasheet (PDF)

isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.1Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS .

  IRF9Z34N   IRF9Z34N






Part Number IRF9Z34N
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF9Z34N DatasheetIRF9Z34N Datasheet (PDF)

PD - 9.1485B IRF9Z34N HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V G S RDS(on) = 0.10Ω ID = -19A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs ar.

  IRF9Z34N   IRF9Z34N







P-Channel MOSFET

isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.1Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -19 IDM Drain Current-Single Pulsed -68 PD Total Dissipation @TC=25℃ 68 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 2.2 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID= -250μA RDS(on) Drain-Source On-Resistance VGS= -10V; ID= -10A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VDS= -55V; VGS= 0V VSD Diode forward voltage Is= -10A; VGS = 0V IRF9Z34N,IIRF9Z34N MIN TYP MAX UNIT -55 V -2.0 .


2020-10-11 : IRF1407    IRF1010EZ    IRF710    IRF540N    IRF520N    MTP2N35    IRF712    IRF713    IRF711    2N40   


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