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IRF9Z24 Datasheet

Part Number IRF9Z24
Manufacturers International Rectifier
Logo International Rectifier
Description POWER MOSFET
Datasheet IRF9Z24 DatasheetIRF9Z24 Datasheet (PDF)

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  IRF9Z24   IRF9Z24






Part Number IRF9Z24S
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRF9Z24 DatasheetIRF9Z24S Datasheet (PDF)

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) - 60 VGS = - 10 V 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Single 0.28 S I2PAK (TO-262) D2PAK (TO-263) G G SD D G S D P-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z24S, SiHF9Z24S) • Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) • 175 °C Operating Temperature • Fast Switch.

  IRF9Z24   IRF9Z24







Part Number IRF9Z24S
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF9Z24 DatasheetIRF9Z24S Datasheet (PDF)

PD - 9.912A IRF9Z24S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z24S) l Low-profile through-hole (IRF9Z24L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l l D VDSS = -60V RDS(on) = 0.28Ω G ID = -11A S Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggediz.

  IRF9Z24   IRF9Z24







Part Number IRF9Z24NSPbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF9Z24 DatasheetIRF9Z24NSPbF Datasheet (PDF)

• Lead-Free PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPbF 4 www.irf.com IRF9Z24NS/LPbF www.irf.com 5 IRF9Z24NS/LPbF 6 www.irf.com IRF9Z24NS/LPbF www.irf.com 7 IRF9Z24NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 ASSEMBLE D ON WW 02, 2000 IN T HE ASSE MBLY LINE "L" INT ERNAT IONAL RECT IFIER L.

  IRF9Z24   IRF9Z24







Part Number IRF9Z24NS
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF9Z24 DatasheetIRF9Z24NS Datasheet (PDF)

PD - 91742A IRF9Z24NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z24NS) l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge.

  IRF9Z24   IRF9Z24







Part Number IRF9Z24NPBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRF9Z24 DatasheetIRF9Z24NPBF Datasheet (PDF)

www.DataSheet4U.com PD - 94982 IRF9Z24NPbF • Lead-Free www.irf.com 1 02/05/04 www.DataSheet4U.com IRF9Z24NPbF 2 www.irf.com www.DataSheet4U.com IRF9Z24NPbF www.irf.com 3 www.DataSheet4U.com IRF9Z24NPbF 4 www.irf.com www.DataSheet4U.com IRF9Z24NPbF www.irf.com 5 www.DataSheet4U.com IRF9Z24NPbF 6 www.irf.com www.DataSheet4U.com IRF9Z24NPbF Peak Diode Recovery dv/dt Test Circuit D.U.T * + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leak.

  IRF9Z24   IRF9Z24







POWER MOSFET

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