IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (...
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
- 60 VGS = - 10 V
12
Qgs (nC)
3.8
Qgd (nC)
5.1
Configuration
Single
0.50
I2PAK (TO-262)
D2PAK (TO-263)
S
G
SD
D G
S
G
D P-Channel
MOSFET
FEATURES Halogen-free According to IEC 61249-2-21
Definition
Advanced Process Technology
Surface Mount (IRF9Z14S, SiHF9Z14S)
Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L)
175 °C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power
MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of is low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF9Z14L, SiHF9Z14L) is available for low-profile applications.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
...