IRF9956

PD - 91559B IRF9956 l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View VDSS = 30V RDS(on) = 0.10Ω Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol Maximum Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current… TA = 25°C TA = 70°C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Maximum Power Dissipation … TA = 25°C TA = 70°C PD Single Pulse Avalanche En...