PD - 9.1560A
PRELIMINARY
l l l l l l
IRF9953
HEXFET® Power MOSFET
8 7
Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated
S1 G1 S2 G2
1
D1 D1 D2 D2
2
VDSS = -30V RDS(on) = 0.25Ω
3 4
6
5
Description
Fifth Generation HEXFETs from International Rectifier ...
