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PD - 96030
HEXFET® Power MOSFET
l l l l l l l l
IRF9540NSPbF IRF9540NLPbF
VDSS = -100V RDS(on) = ...
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PD - 96030
HEXFET® Power
MOSFET
l l l l l l l l
IRF9540NSPbF IRF9540NLPbF
VDSS = -100V RDS(on) = 117mΩ
Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L P-Channel Lead-Free
D
G S
ID = -23A
D
Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
D
G
D
S G
D
S
D2Pak IRF9540NSPbF
G D
TO-262 IRF9540NLPbF
S
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current
Gate
Drain
Max.
-23 -14 -92 3.1 110 0.9 ± 20 84 -14 11 -13 -55 to + 150 300 (1.6mm from case )
Source
Units
A
c
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Single Pulse Avalanche Energy Avalanche Current
W W/°C V mJ A mJ V/ns °C
c
d
Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and
c e
Storage Temperature Range Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC Junction-to-Case Junction-to-Ambient (PCB Mount, steady state) RθJA
Typ.
Max.
1.1 40
Units
°C/W
...