isc P-Channel MOSFET Transistor
IRF9530N,IIRF9530N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.2Ω ·Enhance...
isc P-Channel
MOSFET Transistor
IRF9530N,IIRF9530N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
-100
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
-14
IDM
Drain Current-Single Pulsed
-56
PD
Total Dissipation @TC=25℃
79
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX 1.9 62
UNIT ℃/W ℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc P-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID= -250μA
VGS(th)
Gate Threshold
Voltage
VDS=VGS; ID= -250μA
RDS(on)
Drain-Source On-Resistance
VGS= -10V; ID= -8.4A
IGSS
Gate-Source Leakage Current
VGS= ±20V
IDSS
Drain-Source Leakage Current
VDS= -100V; VGS= 0V
VSD
Diode forward
voltage
Is= -8.4A; VGS = 0V
IRF9530N,IIRF9530N
MIN TYP MAX UNIT
-100
V
-...
