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FIELD EFFECT POWER TRANSISTOR
IRF832,833
4.0 AMPERES 500, 450 VOLTS ROS(ON) = 2.0 .0.
This series of N~Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applica...
