IRF830A

www.vishay.com IRF830A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 1.4 24 6.3 11 Single ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free FEATURES Low gate charge Qg results in simple drive requirement Available Improved gate, avalanche and dynamic dV/dt ruggedness Available Fully characterized capacitance and avalanche voltage and current Effective Coss specified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details APPLICATIONS Switch mode power supply (SMPS) Uninterruptable power supply High speed power Switching TYPICAL SMPS TOPOLOGIES Two transistor forward Half bridge Full bridge TO-220AB IRF830APbF IRF830APbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak ...