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IRF830 Datasheet

Part Number IRF830
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet IRF830 DatasheetIRF830 Datasheet (PDF)

MOSFET IRF830 N-channel mosfet transistor INCHANGE ‹ Features With TO-220 package Simple drive requirements Fast switching V DSS=500V; RDS(ON)1.5 ;I 1.gate 2.drain 3.source D=4.5A ‹ Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER VDSS Drain-source voltage (VGS=0) VGS Gate-source voltage ID Drain Current-continuous@ TC=25 Ptot Total Dissipation@TC=25 Tj Max. Operating Junction temperature Tstg Storage temperature RATING 500 20 4.5 100 150 -65~150 UNIT V V A W ‹ Electrical Charact.

  IRF830   IRF830






Part Number IRF830
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF830 DatasheetIRF830 Datasheet (PDF)

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  IRF830   IRF830







Part Number IRF830
Manufacturers TRSYS
Logo TRSYS
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet IRF830 DatasheetIRF830 Datasheet (PDF)

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  IRF830   IRF830







Part Number IRF830
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Power MOSFET
Datasheet IRF830 DatasheetIRF830 Datasheet (PDF)

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  IRF830   IRF830







Part Number IRF830
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-Channel Power MOSFET
Datasheet IRF830 DatasheetIRF830 Datasheet (PDF)

® IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH™ MOSFET TYPE IRF830 s s s s s V DSS 500 V R DS(on) < 1.5 Ω ID 4.5 A TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 2 3 DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLIC.

  IRF830   IRF830







Part Number IRF830
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel Power MOSFET
Datasheet IRF830 DatasheetIRF830 Datasheet (PDF)

IRF830 Data Sheet July 1999 File Number 1582.3 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching t.

  IRF830   IRF830







N-Channel MOSFET Transistor

MOSFET IRF830 N-channel mosfet transistor INCHANGE ‹ Features With TO-220 package Simple drive requirements Fast switching V DSS=500V; RDS(ON)1.5 ;I 1.gate 2.drain 3.source D=4.5A ‹ Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER VDSS Drain-source voltage (VGS=0) VGS Gate-source voltage ID Drain Current-continuous@ TC=25 Ptot Total Dissipation@TC=25 Tj Max. Operating Junction temperature Tstg Storage temperature RATING 500 20 4.5 100 150 -65~150 UNIT V V A W ‹ Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD Drain-source breakdown voltage VGS=0; ID=0.25mA Gate threshold voltage VDS= VGS; ID=0.25mA Drain-source on-stage resistance VGS=10V; ID=2.7A Gate source leakage current VGS=20V ;VDS=0 Zero gate voltage drain current VDS=500V; VGS=0 Diode forward voltage IF=4.5A; VGS=0 123 TO-220 MIN MAX UNIT 500 V 2 4V 1.5 100 nA 1.0 uA 1.6 V .


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