IRF7902PBF

www.DataSheet4U.com PD - 97194A IRF7902PbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Improved Body Diode Reverse Recovery l Lead-Free VDSS 30V Q1 22.6m:@VGS = 10V Q2 14.4m:@VGS = 10V 9 T ÃÃ9! T ÃÃ9! T ÃÃ9! RDS(on) max ID 6.4A 9.7A B T! T! B! SO-8 Absolute Maximum Ratings Parameter VDS VGS I D @ TA = 25°C I D @ TA = 70°C I DM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q1 Max. 30 ± 20 6.4 5.1 51 1.4 0.9 0.011 Q2 Max. Units V c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 9.7 7.8 78 2.0 1.3 0.016 -55 to + 150 A W W/°C °C Thermal Resistance RθJL RθJA Parameter Junction-to-Drain Lead g Junction-to-Ambient fg Q1 Max. 20 90 Q2 Max. 20 62.5 Units °C/W www.irf.com 1 07/10/06 IRF7902PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Q1&Q2 Q1 Q2 Q1 Q2 VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source L...