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PD - 96013A
IRF7832ZPbF
HEXFET® Power MOSFET
Applications l Synchronous MOSFET for Notebook Proces...
www.DataSheet4U.com
PD - 96013A
IRF7832ZPbF
HEXFET® Power
MOSFET
Applications l Synchronous
MOSFET for Notebook Processor Power l Synchronous Rectifier
MOSFET for Isolated DC-DC Converters Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche
Voltage and Current l 20V VGS Max. Gate Rating l Lead-Free l 100% tested for Rg
VDSS
30V
3.8m:@VGS = 10V
A A D D D D
RDS(on) max
Qg
30nC
S S S G
1 2 3 4
8 7
6 5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source
Voltage Gate-to-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 ± 20 21 17 160 2.5 1.6 0.02 -55 to + 150
Units
V
c
A W W/°C °C
Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Thermal Resistance
RθJL RθJA
g Junction-to-Ambient fg
Junction-to-Drain Lead
Parameter
Typ.
––– –––
Max.
20 50
Units
°C/W
Notes through
are on page 10
www.irf.com
1
06/30/05
IRF7832ZPbF
Static @ T J = 25°C (unless otherwise specified)
Parameter
BV DSS ∆Β V DSS / ∆T J R DS(on) V GS(th) ∆V GS(th) I DSS I GSS gfs Qg Q gs1 Q gs2 Q gd Q godr Q sw Q oss Rg t d(on) tr t d(off) tf C iss C oss C rss Drain-to-Source Breakdown
Voltage Breakdown
Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold
Voltage Gate Threshold
Voltage Coefficient Drain-to-Sourc...