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IRF7822 Datasheet

Part Number IRF7822
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF7822 DatasheetIRF7822 Datasheet (PDF)

PD - 94279 IRF7822 HEXFET® Power MOSFET for DC-DC Converters • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses S S 1 8 7 A D D D D 2 Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of micropr.

  IRF7822   IRF7822






Part Number IRF7828PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF7822 DatasheetIRF7828PBF Datasheet (PDF)

PD-95214A IRF7828PbF HEXFET® Power MOSFET for DC-DC Converters • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free S S S G 1 2 3 4 8 7 A D D D D 6 5 Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the la.

  IRF7822   IRF7822







Part Number IRF7828
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRF7822 DatasheetIRF7828 Datasheet (PDF)

PD - 94602 IRF7828 HEXFET® Power MOSFET for DC-DC Converters • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses S S 1 8 7 A D D D D 2 Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of micropr.

  IRF7822   IRF7822







Part Number IRF7823PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF7822 DatasheetIRF7823PBF Datasheet (PDF)

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  IRF7822   IRF7822







Part Number IRF7822PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF7822 DatasheetIRF7822PBF Datasheet (PDF)

PD - 95024 IRF7822PbF HEXFET® Power MOSFET for DC-DC Converters • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free S S S G 1 2 3 4 8 7 A D D D D 6 5 Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the l.

  IRF7822   IRF7822







Power MOSFET

PD - 94279 IRF7822 HEXFET® Power MOSFET for DC-DC Converters • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses S S 1 8 7 A D D D D 2 Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7822 has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7822 offers particulary low RDS(on) and high Cdv/ dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application. S G 3 6 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS U IRF7822 RDS(on) QG Qsw Qoss 5.0mΩ 44nC 12nC 27nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain CurrentQ Power Dissipation TA = 25°C TA = 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source CurrentQ Thermal Resistance Parameter Maximum Junction-to-AmbientS Maximum Junction-to-Lead RθJA RθJL Max. 40 20 Units °C/W °C/W TJ, TSTG IS ISM TA = 25°C.


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