PD- 95023A
IRF7811WPbF
HEXFET® Power MOSFET for DC-DC Converters
• • • • • • N-Channel Application-Specific MOSFETs Ide...
PD- 95023A
IRF7811WPbF
HEXFET® Power
MOSFET for DC-DC Converters
N-Channel Application-Specific
MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses 100% Tested for Rg Lead-Free
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Description This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811W has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811W offers particulary low RDS(on) and high Cdv/ dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application.
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DEVICE CHARACTERISTICS
IRF7811W RDS(on) QG Qsw Qoss 9.0mΩ 18nC 5.5nC 12nC
Absolute Maximum Ratings Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation TA = 25°C TL = 90°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead RθJA ...