IRF7811W

PD-94031A IRF7811W HEXFET® Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses S S 1 8 7 A D D D D 2 Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811W has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811W offers particulary low RDS(on) and high Cdv/ dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application. S G 3 6 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS… IRF7811W RDS(on) QG Qsw Qoss 9.0mΩ 18nC 5.5nC 12nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation TA = 25°C TL = 90°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambientƒ Maximum Junction-to-Lead RθJA RθJL Max. 40 20 Units °C/W °C/W TJ, TSTG IS ISM TA = 2...