IRF7811A

PD - 93810 PD - 93811 IRF7809A/IRF7811A IRF7809A/IRF7811A PROVISIONAL DATASHEET N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications HEXFET® Chipset for DC-DC Converters S S S G 1 8 7 A A D D D D 2 Description These new devices employ advanced HEXFET® Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Both the IRF7809A and IRF7811A have been optimized and are 100% tested for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809A offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. The IRF7811A offers an extremely low combination of Qsw & RDS(on) for reduced losses in control FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. 3 6 4 5 SO-8 T o p V ie w DEVICE RATINGS IRF7809A VDS RDS(on) QG Qsw Qoss 30V 8.5 mΩ 73 nC 22.5 nC 30 nC IRF7811A 28V 12 mΩ 23 nC 7 nC 31 nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS...