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IRF7751 Datasheet

Part Number IRF7751
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF7751 DatasheetIRF7751 Datasheet (PDF)

PD - 94002 IRF7751 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel VDSS -30V RDS(on) max 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V ID -4.5A -3.8A Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well kno.

  IRF7751   IRF7751






Part Number IRF7759L2TRPBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF7751 DatasheetIRF7759L2TRPBF Datasheet (PDF)

PD - 96283 IRF7759L2TRPbF IRF7759L2TR1PbF RoHS Compliant, Halogen Free  l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified l Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ VDSS VGS ±20V ma.

  IRF7751   IRF7751







Part Number IRF7759L2TR1PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF7751 DatasheetIRF7759L2TR1PBF Datasheet (PDF)

PD - 96283 IRF7759L2TRPbF IRF7759L2TR1PbF RoHS Compliant, Halogen Free  l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified l Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ VDSS VGS ±20V ma.

  IRF7751   IRF7751







Part Number IRF7759L2PbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF7751 DatasheetIRF7759L2PbF Datasheet (PDF)

IRF7759L2PbF l RoHS Compliant, Halogen Free  l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) 75V min ±20V max 1.8mΩ@ .

  IRF7751   IRF7751







Part Number IRF7757PbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF7751 DatasheetIRF7757PbF Datasheet (PDF)

l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.2mm) l Available in Tape & Reel l Common Drain Configuration l Lead-Free Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable devi.

  IRF7751   IRF7751







Part Number IRF7757GPBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF7751 DatasheetIRF7757GPBF Datasheet (PDF)

PD- 96154A IRF7757GPbF l l l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Common Drain Configuration Lead-Free Halogen-Free HEXFET® Power MOSFET VDSS 20V RDS(on) max (mW) 35@VGS = 4.5V 40@VGS = 2.5V ID 4.8A 3.8A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedize.

  IRF7751   IRF7751







Power MOSFET

PD - 94002 IRF7751 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel VDSS -30V RDS(on) max 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V ID -4.5A -3.8A Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de1 2 3 4 1= 2= 3= 4= D1 S1 S1 G1 8= 7= 6= 5= 8 7 6 5 D2 S2 S2 G2 signer with an extremely efficient and reliable device for use in battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. TSSOP-8 Absolute Maximum Ratings Parameter VDS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C VGS TJ, TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -30 -4.5 -3.6 -18 1.0 0.64 0.008 ±20 -55 to +150 Units V A W W/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ.


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