PD - 93894A
IRF7700
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Lo...
PD - 93894A
IRF7700
HEXFET® Power
MOSFET
l l l l l
Ultra Low On-Resistance P-Channel
MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel
VDSS
-20V
RDS(on) max
0.015@VGS = -4.5V 0.024@VGS = -2.5V
ID
-8.6A -7.3A
Description
HEXFET® power
MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides the de1 2 3 4 1= 2= 3= 4= D S S G
D
8 7
G
6
S
8= 7= 6= 5= D S S D
5
signer with an extremely efficient and reliable device for use in battery and load management.
The TSSOP-8 package, has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the TSSOP-8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
VDS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C VGS TJ, TSTG Drain- Source
Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Junction and Storage Temperature Range
Max.
-20 ±8.6 ±6.8 ±68 1.5 0.96 0.01 ± 12 -55 to + 150
Units
V A
W W/°C V °C
Thermal Resistance
Paramet...