IRF7526D1

PD -91649C IRF7526D1 FETKY TM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET® Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint TM A A S G 1 8 K K D D 2 7 VDSS = -30V RDS(on) = 0.20Ω Schottky Vf = 0.39V 3 6 4 5 Description T op V ie w The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. The new Micro8 package, with half the footprint area of the standard SO-8, provides TM the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low TM profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. TM Micro8 TM Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Œ Power Dissipation Linear Derating Factor Gate-to-Source Voltage ...