IRF7493

PD - 94654B IRF7493 HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 80V RDS(on) max 15m:@VGS=10V Qg (typ.) 35nC Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 80 ± 20 9.3 7.4 74 2.5 1.6 0.02 -55 to + 150 Units V c A W Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range f f W/°C °C Thermal Resistance Parameter RθJC RθJA Junction-to-Lead Junction-to-Ambient Typ. ––– ––– Max. 20 50 Units f Notes  through … are on page 9 www.irf.com 1 7/29/03 IRF7493 Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 80 ––– ––– 2.0 ––– ––– ––– ––– ––– 0.074 11.5 ––– ––– ––– ––– ––– ––– ––– 15 4.0 20 250 200...