PD- 94037A
IRF7473
HEXFET® Power MOSFET
Applications l Telecom and Data-Com 24 and 48V input DC-DC converters l Motor C...
PD- 94037A
IRF7473
HEXFET® Power
MOSFET
Applications l Telecom and Data-Com 24 and 48V input DC-DC converters l Motor Control l Uninterrutible Power Supply Benefits l Ultra Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristic l Improved Avalanche Ruggedness and Dynamic dv/dt l Fully Characterized Avalanche
Voltage and Current Typical SMPS Topologies l Full and Half Bridge 48V input Circuit l Forward 24V input Circuit Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
VDSS
100V
RDS(on) max 26mΩ@VGS = 10V
ID
6.9A
S S S G
1
8
A A D D D D
2
7
3
6
4
5
T o p V ie w
SO-8
Max.
6.9 5.5 55 2.5 0.02 ± 20 5.8 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V V/ns °C
Thermal Resistance
Symbol
RθJL RθJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
––– –––
Max.
20 50
Units
°C/W
Notes through are on page 8
www.irf.com
1
4/27/01
IRF7473
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown
Voltage ∆V(BR)DSS/∆TJ Breakdown
Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold
Voltage V(BR)DSS IDSS IGSS Dr...