PD - 93883B
SMPS MOSFET
Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Tele...
PD - 93883B
SMPS
MOSFET
Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use
l
IRF7467
HEXFET® Power
MOSFET
VDSS
30V
RDS(on) max
12mΩ
ID
11A
High Frequency Buck Converters for Computer Processor Power
A A D D D D
l
Benefits Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche
Voltage and Current
S S S G
1
8 7
2
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG
Parameter
Drain-Source
Voltage Gate-to-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
30 ± 12 11 9.0 90 2.5 1.6 0.02 -55 to + 150
Units
V V A W W W/°C °C
Thermal Resistance
Symbol
RθJL RθJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
––– –––
Max.
20 50
Units
°C/W
Notes through are on page 8
www.irf.com
1
3/25/01
IRF7467
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown
Voltage ∆V(BR)DSS/∆TJ Breakdown
Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 ––– ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold
Voltage 0.6 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.029 9.4 1...